深圳市惠新晨电子有限公司
全系列NMOS和PMOS 产品不断更新，请跟我司销售员联系
| 20-250V N沟道MOSFET | ||||||||
型号 | 封装 | Rdson (VGS= 10V) | Rdson ( VGS=4.5V) | Bvdss | ID | Ciss | type VthHCP | 类型 |
| HCC2300
| SOT23 | / | 16mΩ | 20V | 7A | 280pF | 0.65V | 沟槽型NMOS |
| HCC2302
| SOT23 | / | 43mΩ | 20V | 3A | 180pF | 0.65V | 沟槽型NMOS |
HCK002N02L
| TO-252 | / | 2.4mΩ | 20V | 125A | 5670pF | 0.7V | 沟槽型NMOS |
HCE002N02L
| PDFN5*6 | / | 2.4mΩ | 20V | 125A | 5670pF | 0.7V | 沟槽型NMOS |
HCE001N02L
| PDFN5*6 | / | 1mΩ | 20V | 190A | 5670pF | 0.7V | 沟槽型NMOS |
HCK006N02L
|
TO-252 | / | 6.4mΩ | 20V | 50A | 1590pF | 0.85V | 沟槽型NMOS |
HCC027N03L
| SOT23 | 20mΩ | 30mΩ | 30V | 7A | 405pF | 1.5V | 沟槽型NMOS |
HCD027N03L
| PDFN3*3 | 17mΩ | 27mΩ | 30V | 33A | 465pF | 1.5V | 沟槽型NMOS |
HCK027N03L
| TO-252 | 17mΩ | 27mΩ | 30V | 35A | 465pF | 1.5V | 沟槽型MOS |
HG3019P
| SOT89-3 | / | 5mΩ | 30V | 50A | 745pF | 1.8V | SGT工艺NMOS |
HCD004N03L
| PDFN3*3 | 4.5mΩ | 7.3mΩ | 30V | 90A | 1760pF | 1.8V | 沟槽型NMOS |
HCE004N03L
| PDFN5*6 | 4.5mΩ | 7.3mΩ | 30V | 90A | 1760pF | 1.8V | 沟槽型NMOS |
HC90N03M
|
TO-252 | 4.5mΩ | 7.3mΩ | 30V | 90A | 1760pF | 1.8V | 沟槽型NMOS |
| HCP4A5N03L
| SOT89-3 | 4.5mΩ | 7.3mΩ | 30V | 18A | 1760pF | 1.8V | 沟槽型NMOS |
HCK003N03L
| TO-252 | 2.8mΩ | 4.3mΩ | 30V | 120A | 2764pF | 1.5V | 沟槽型NMOS |
HCE003N03L
| PDFN5*6 | 2.7mΩ | 4.2mΩ | 30V | 120A | 2764pF | 1.5V | 沟槽型NMOS |
HCK006N03L
| TO-252 | / | 6.2mΩ | 30V | 45A | 1264pF | 0.85V | 沟槽型NMOS |
HCD006N03L
| PDFN3*3 | / | 6.2mΩ | 30V | 42A | 1264pF | 0.85V | 沟槽型NMOS |
HG004N03L
| TO-252 | 4.8mΩ | 7.8mΩ | 30V | 75A | 745pF | 1.8V | SGT工艺NMOS |
HC005N03L
| TO-252 | 5.8mΩ | 9mΩ | 30V | 70A | 1110pF | 1.8V | 沟槽型NMOS |
HC006N03M
|
TO-252 | 6.1mΩ | 8mΩ | 30V | 62A | 1264pF | 1.5V | 沟槽型NMOS |
HG3019D
| PDFN3*3 |
4.8mΩ | 7.8mΩ | 30V | 68A | 745pF | 1.8V | SGT工艺NMOS |
HC009N03L
| TO-252 | 8mΩ | 12mΩ | 30V | 55A | 845pF | 1.9V | 沟槽型NMOS |
HCK008N03M
| TO-252 | 8mΩ | 12mΩ | 30V | 55A | / | 1.5V | 沟槽型NMOS |
HC3022D
| PDFN3*3 | 7.5mΩ | 13mΩ | 30V | 45A | 852pF | 1.8V | 沟槽型NMOS |
HC3039P  | SOT89-3 | / | 18mΩ | 30V | 20A | 445pF | 1.8V | 沟槽型NMOS |
HC3039D
| PDFN3*3 | 12.5mΩ | 24mΩ | 30V | 25A | 459pF | 1.8V | 沟槽型NMOS |
HC020N03L
| TO-252 | 13mΩ | 22mΩ | 30V | 30A | 445pF | 1.6V | 沟槽型NMOS |
HC013N03M
| TO-252 | 17mΩ | 20mΩ | 30V | 40A | 770pF | 1.5V | 沟槽型NMOS |
HC3600M
| SOT23-3L | 16mΩ | 22mΩ | 30V | 8A | 445pF | 1.6V | 沟槽型NMOS |
HC3400M
| SOT23-3L | 21mΩ | 22mΩ | 30V | 5.8A | 635pF | 0.85V | 沟槽型NMOS |
| HCC3400M
| SOT23 | 21mΩ | 22mΩ | 30V | 5.6A | 635pF | 0.85V | 沟槽型NMOS |
| HCP3400M
| SOT89-3 | 21mΩ | 22mΩ | 30V | 15A | 635pF | 0.85V | 沟槽型NMOS |
HC3600G
| SOT23 |
21mΩ | 35mΩ | 30V | 4.5A | 330pF | 1.8V | 沟槽型NMOS |
HC3400Y
| SOT23 | / | 27mΩ | 30V | 5.8A | 835pF | 0.85V | 沟槽型NMOS |
| HCC3400Z
| SOT23 | 24mΩ | 28mΩ | 30V | 5.1A | 521pF | 0.9V | 沟槽型NMOS |
| HCP3400Y
| SOT89-3 | / | 27mΩ | 30V | 10A | 835pF | 0.85V | 沟槽型NMOS |
HC3404Y
| SOT23 | / | 27mΩ | 30V | 5.7A | 835pF | 1.5V | 沟槽型NMOS |
HC030N03L
| TO-252 |
/ | 25mΩ | 30V | 20A | 745pF | 0.8V | 沟槽型NMOS |
HC3400S
|
SOT23 | / | 45mΩ | 30V | 4A | 235pF | 0.8V | 沟槽型NMOS |
HC3N04
|
SOT23 | 76mΩ | 83mΩ | 40V | 3A | 200pF | 1.2V | 沟槽型NMOS |
HC4N04
| SOT23 | 30mΩ | 38mΩ | 40V | 4A | 381pF | 1.5V | 沟槽型NMOS |
HC5N04
| SOT23-3L | 15mΩ | 21mΩ | 40V | 6.5A | 681pF | 1.5V | 沟槽型NMOS |
HC4012D
| PDFN3*3 | 6.9mΩ | 8.2mΩ | 40V | 38A | 2094pF | 1.5V | 沟槽型NMOS |
HCK011N04L
| TO-252 | 11.5mΩ | 15.5mΩ | 40V | 35A | 1314pF | 1.5V | 沟槽型NMOS |
HCD40N11L
| PDFN3*3 | 2.9mΩ | 3.5mΩ | 40V | 90A | / | 1.5V | 沟槽型NMOS |
HCE40N11L
| PDFN5*6 | 2.9mΩ | 3.7mΩ | 40V | 120A | 6130pF | 1.5V | 沟槽型NMOS |
HC007N04L
| TO-252 | 6.7mΩ | 7.9mΩ | 40V | 57A | 2094pF | 1.5V | 沟槽型NMOS |
HCK003N04L
| TO-252 | 2.9mΩ | 3.7mΩ | 40V | 130A | 6130pF | 1.5V | 沟槽型NMOS |
HGK001N04L
| TO-252 | 1.6mΩ | 2.2mΩ | 40V | 170A | 3565pF | 1.7V | SGT工艺NMOS |
HGE001N04L
| PDFN5*6 | 1.6mΩ | 2.2mΩ | 40V | 170A | 3565pF | 1.7V | SGT工艺NMOS |
HGK004N04
| TO-252 | 5.2mΩ | 7mΩ | 40V | 85A | 1105pF | 1.7V | SGT工艺NMOS |
HGE004N04L
| PDFN5*6 | 5.2mΩ | 7mΩ | 40V | 85A | 1105pF | 1.7V | SGT工艺NMOS |
HGD004N04L
| PDFN3*3 | 5.2mΩ | 7mΩ | 40V | 72A | 1105pF | 1.7V | SGT工艺NMOS |
HCK004N04L
| TO-252 | 3.9mΩ | 5.5mΩ | 40V | 95A | 3260pF | 1.7V | 沟槽型NMOS |
HCE004N04L
| PDFN5*6 | 3.9mΩ | 5.5mΩ | 40V | 95A | 3260pF | 1.7V | 沟槽型NMOS |
HCD004N04L
| PDFN3*3 | 3.9mΩ | 5.5mΩ | 40V | 75A | 3260pF | 1.7V | 沟槽型NMOS |
HC7002
| SOT23 | / | 1.6Ω | 60V | 0.1A | / | 1.8V | 沟槽型NMOS |
HCC2N7002K
| SOT23 | 1.7Ω | 1.8Ω | 60V | 0.3A | 28pF | 1.5V | 沟槽型NMOS |
HG008N06LS
| SOP-8 | 8mΩ | 10mΩ | 60V | 16A | 660pF | 1.6V | SGT工艺NMOS |
HCK007N06L
| TO-252 | 7.5mΩ | 9.5mΩ | 60V | 65A | 2511pF | 1.5V | 沟槽型NMOS |
| HG012N06HS
| SOP-8 | 10.5mΩ | 17mΩ | 60V | 13A | 780oF | 1.8V | SGT工艺NMOS |
HG6025P
| SOT89-3 | 8mΩ | 10mΩ | 60V | 65A | 650pF | 1.8V | SGT工艺NMOS |
| 型号 | 封装 | Rdson (VGS=10V) | Rdson (VGS=4.5V) | Bvdss | ID | Ciss | type Vth | 类型 |
HG008N06L
| TO-252 | 8mΩ | 10mΩ | 60V | 70A | 650pF | 1.8V | SGT工艺NMOS |
HGE008N06L
| PDFN5*6 | 8mΩ | 10mΩ | 60V | 70A | 650pF | 1.8V | SGT工艺NMOS |
HCK007N06L
| TO-252 | 7.5mΩ | 9.5mΩ | 60V | 65A | 2511pF | 1.5V | 沟槽型NMOS |
HG012N06HS
| SOP-8 | 10.5mΩ | 17mΩ | 60V | 13A | 780pF | 1.8V | SGT工艺NMOS |
HG6037D
| PDFN3*3 | 10mΩ | 14mΩ | 60V | 40A | 742pF | 1.7V | SGT工艺NMOS |
HG011N06L
| TO-252 | 10mΩ | 14mΩ | 60V | 50A | 742pF | 1.7V | SGT工艺NMOS |
HG6013P
| SOT89-3 | 11mΩ | 15mΩ | 60V | 40A | 550pF | 1.6V | SGT工艺NMOS |
HGP009N06L
| SOT89-3 | 9mΩ | 13mΩ | 60V | 45A | 1056pF | 1.8V | SGT工艺NMOS |
HGD009N06L
| PDFN3*3 | 9mΩ | 13mΩ | 60V | 55A | 1056pF | 1.8V | SGT工艺NMOS |
HGK009N06L
| TO-252 | 9mΩ | 13mΩ | 60V | 55A | 1056pF | 1.8V | SGT工艺NMOS |
HG6037P
| SOT89-3 | / | 13mΩ | 60V | 40A | / | 1.6V | SGT工艺NMOS |
HC6013P
| SOT89-3 | / | 17mΩ | 60V | 40A | 1050pF | 1.8V | 沟槽型NMOS |
HC017N06L
| TO-252 | 17mΩ | 21mΩ | 60V | 40A | 1030pF | 1.5V | 沟槽型NMOS |
HC015N06L
| TO-252 | 12mΩ | 15mΩ | 60V | 50A | 1050pF | 1.5V | 沟槽型NMOS |
HCK016N06L
| TO-252 | 14mΩ | 17mΩ | 60V | 50A | 1000pF | 1.5V | 沟槽型NMOS |
HC010N06L
| TO-252 | 8.9mΩ | 10.9mΩ | 60V | 60A | 2411pF | 1.5V | 沟槽型NMOS |
HC037N06L
| TO-252 | 28mΩ | 30mΩ | 60V | 30A | 650pF | 1.8V | 沟槽型NMOS |
HC031N06L
| TO-252 | 26mΩ | 36mΩ | 60V | 25A | 1082pF | 1.6V | 沟槽型NMOS |
HCK029N06L
| TO-252 | 29mΩ | 35mΩ | 60V | 22A | 1052pF | 1.5V | 沟槽型NMOS |
HCD031N06L
| PDFN3*3 | 26mΩ | 30mΩ | 60V | 25A | 1082pF | 1.6V | 沟槽型NMOS |
HCP031N06L
| SOT89-3 | 26mΩ | 36mΩ | 60V | 12A | 1082pF | 1.6V | 沟槽型NMOS |
HC6019D
| PDFN3*3 | 29mΩ | 32mΩ | 60V | 20A | 650pF | 1.6V | 沟槽型NMOS |
HC037N06LS
| SOP-8 | 31mΩ | 34mΩ | 60V | 8A | 650pF | 1.8V | 沟槽型NMOS |
HC070N06L
| SOT23 | 65mΩ | 80mΩ | 60V | 15A | 435pF | 1.5V | 沟槽型NMOS |
HC706
| SOP8 | 60mΩ | 70mΩ | 60V | 7A | 435pF | 1.8V | 沟槽型NMOS |
HC070N06LS
| SOT23 | 65mΩ | 80mΩ | 60V | 6A | 435pF | 1.5V | 沟槽型NMOS |
HGE004N06L
| PDFN5*6 | 4.7mΩ | 6.5mΩ | 60V | 90A | 2133pF | 1.8V | SGT工艺NMOS |
HGK004N06
| TO-252 | 4.7mΩ | 6.5mΩ | 60V | 90A | 2133pF | 1.8V | SGT工艺NMOS |
HGA004N06L
| TO-263 | 4mΩ | 6mΩ | 60V | 120A | 2133pF | 1.8V | SGT工艺NMOS |
HGE2R2N06L
| PDFN5*6 | 2.2mΩ | 3mΩ | 60V | 155A | 3680pF | 1.8V | SGT工艺NMOS |
HGK2R2N06L
| TO-252 | 2.2mΩ | 3mΩ | 60V | 155A | 3680pF | 1.8V | SGT工艺NMOS |
HGE2R26N06L
| PDFN5*6 | 2.6mΩ | 3.4mΩ | 60V | 120A | 4240pF | 1.5V | SGT工艺NMOS |
HGK2R6N06L
| TO-252 | 2.6mΩ | 3.4mΩ | 60V | 120A | 4240pF | 1.5V | SGT工艺NMOS |
HGA008N06L
| TO-220 | 8mΩ | 10mΩ | 60V | 70A | 650pF | 1.8V | SGT工艺NMOS |
HGK013N06L
| TO-252 | 13mΩ | 21mΩ | 65V | 45A | 440pF | 1.9V | SGT工艺NMOS |
HGD013N06L
| PDFN3*3 | 13mΩ | 21mΩ | 65V | 45A | 440pF | 1.9V | SGT工艺NMOS |
HCA006N68H
| TO-220 | 5.2mΩ | / | 68V | 100A | 4723pF | 3V | 沟槽型NMOS |
HC230N08LS
| SOT23 | 230mΩ | 255mΩ | 85V | 4A | 405pF | 1.8V | 沟槽型NMOS |
HG008N10L
| TO-252 | 8mΩ | 10mΩ | 100V | 82A | 1406pF | 1.7V | SGT工艺NMOS |
HG1015DA
| PDFN5*6 | 9mΩ | 12mΩ | 100V | 70A | 1630pF | 1.5V | SGT工艺NMOS |
HG010N10L
| TO-252 | 9mΩ | 12mΩ | 100V | 70A | 1630pF | 1.5V | SGT工艺NMOS |
HG1006DA
| PDFN5*6 | 20mΩ | 24mΩ | 100V | 25A | 839pF | 1.6V | SGT工艺NMOS |
HG018N10LS
| SOP-8 | 20mΩ | 24mΩ | 100V | 12A | 839pF | 1.7V | SGT工艺NMOS |
HC1006D
| PDFN3*3 | 22mΩ | 24mΩ | 100V | 30A | 2100pF | 1.3V | 沟槽型NMOS |
HC025N10L
| TO-252 | 24mΩ | 28mΩ | 100V | 45A | 2000pF | 1.2V | 沟槽型NMOS |
HC032N10L
| TO-252 | 32mΩ | 37mΩ | 100V | 30A | 1800pF | 1.5V | 沟槽型NMOS |
HC8N10
| SOP-8 | 27mΩ | 28mΩ | 100V | 8A | 2000pF | 1.2V | 沟槽型NMOS |
HG021N10L
|
TO-252 | 25mΩ | 30mΩ | 100V | 25A | 893pF | 1.6V | SGT工艺NMOS |
HG024N10L
| TO-252 | 23mΩ | 25mΩ | 100V | 25A | 650pF | 1.5V | SGT工艺NMOS |
HGE024N10L
| PDFN5*6 | 20mΩ | 24mΩ | 100V | 40A | 544pF | 1.4V | SGT工艺NMOS |
HGK015N10L
| TO-252 | 15mΩ | 19mΩ | 100V | 50A | 1050pF | 1.7V | SGT工艺NMOS |
HGE015N10L
| PDFN5*6 | 13mΩ | 16mΩ | 100V | 45A | 980pF | 1.7V | SGT工艺NMOS |
HG1037D
| PDFN3*3 | 23mΩ | 25mΩ | 100V | 25A | 650pF | 1.5V | SGT工艺NMOS |
HG1006D
|
PDFN3*3 | 25mΩ | 30mΩ | 100V | 25A | 839pF | 1.7V | SGT工艺NMOS |
| HCD070N10L
| PDFN3*3 | 82mΩ | 85mΩ | 100V | 15A | 950pF | 1.3V | 沟槽型NMOS |
HG080N10L
| TO-252 | 75mΩ | 95mΩ | 100V | 15A | 310pF | 1.8V | SGT工艺NMOS |
| HGK075N10L
| TO-252 | 75mΩ | 95mΩ | 100V | 15A | / | 1.65V | SGT工艺NMOS |
HC070N10L
| TO-252 | 82mΩ | 85mΩ | 100V | 15A | 950pF | 1.3V | 沟槽型NMOS |
15N10
| SOP-8 | 70mΩ | 79mΩ | 100V | 15A | 1200pF | 1.9V | 沟槽型NMOS |
HC13N10
| SOP-8 | 82mΩ | 85mΩ | 100V | 13A | 950pF | 1.3V | 沟槽型NMOS |
HG14N10
| SOP-8 | 91mΩ | 115mΩ | 100V | 13A | 210pF | 1.7V | SGT工艺NMOS |
HG15N10
| SOP-8 | 75mΩ | 95mΩ | 100V | 15A | 310pF | 1.8V | SGT工艺NMOS |
型号 | 封装 | Type Rdson | Type Rdson | Bvdss | ID | Ciss | type Vth | 类型 |
HC1017P
| SOT89-3 | 80mΩ | 90mΩ | 100V | 12A | 1100pF | 1.6V | 沟槽型MOS |
HC070N10S
| SOT23-3L | 88mΩ | 95mΩ | 100V | 6A | 950pF | 1.3V | 沟槽型NMOS |
HC5N10
| SOT23 | 90mΩ | 97mΩ | 100V | 5A | 950pF | 1.3V | 沟槽型NMOS |
HC6N10
| SOT23-3L | 88mΩ | 95mΩ | 100V | 6A | 950pF | 1.3V | 沟槽型NMOS |
HC090N10L
| TO-252 | 80mΩ | 90mΩ | 110V | 15A | 632pF | 1.7V | 沟槽型NMOS |
HC12N10
| SOP-8 | 80mΩ | 90mΩ | 100V | 12A | 1100pF | 1.6V | 沟槽型NMOS |
HG610A
| SOT23 | 80mΩ | 90mΩ | 100V | 5A | 180pF | 1.8V | SGT工艺NMOS |
HG610B
| SOT23 | 91mΩ | 115mΩ | 100V | 4A | 200pF | 1.7V | SGT工艺NMOS |
HG510S
| SOT23-3L | / | 110mΩ | 100V | 5A | 225pF | 1.8V | SGT工艺NMOS |
HG1033D
| PDFN3*3 | 110mΩ | 130mΩ | 100V | 8A | 201pF | 1.7V | SGT工艺NMOS |
HG1046S
| SOP-8 | 110mΩ | 130mΩ | 100V | 8A | 201pF | 1.7V | SGT工艺NMOS |
HG160N10L
| TO-252 | 110mΩ | 130mΩ | 100V | 8A | 201pF | 1.7V | SGT工艺NMOS |
HG160N10LS
| SOT23 | 115mΩ | 135mΩ | 100V | 5A | 201pF | 1.7V | SGT工艺NMOS |
HC1033D
| PDFN3*3 | 143mΩ | 150mΩ | 100V | 8A | 405pF | 1.6V | 沟槽型NMOS |
HC210N10LS
| SOT23 | 201mΩ | 215mΩ | 100V | 3A | 170pF | 1.5V | 沟槽型NMOS |
HC200N10L
| TO-252 | 190mΩ | 205mΩ | 100V | 8A | 170pF | 1.3V | 沟槽型NMOS |
HGA024N10L
| TO-220 | 23mΩ | 25mΩ | 100V | 25A | 650pF | 1.4V | SGT工艺NMOS |
HGB024N10L
| TO-263 | 23mΩ | 25mΩ | 100V | 25A | 650pF | 1.5V | SGT工艺NMOS |
HGA010N10L
| TO-220 | 9mΩ | 12mΩ | 100V | 70A | 1590pF | 1.5 | SGT工艺NMOS |
HGA002N10H
| TO-220 | 2.8mΩ | / | 100V | 196A | 7243pF | 3V | SGT工艺NMOS |
HGA004N10H
| TO-220 | 4.6mΩ | / | 100V | 141A | 2944pF | 3V | SGT工艺NMOS |
| HGE006N10L
| PDFN5*6 | 6mΩ | 7.5mΩ | 100V | 85A | / | 1.7V | SGT工艺NMOS |
| HGK006N10L
| TO-252 | 5.2mΩ | 6.7mΩ | 100V | 80A | 2208pF | 1.7V | SGT工艺NMOS |
| HGK130N12L
| TO-252 | 130mΩ | 160mΩ | 120V | 10A | / | 1.7V | SGT工艺NMOS |
| HGC130N12L
| SOT23 | 135mΩ | 165mΩ | 120V | 5A | / | 1.7V | SGT工艺NMOS |
| HGD130N12L
| PDFN3*3 | 130mΩ | 160mΩ | 120V | 10A | / | 1.7V | SGT工艺NMOS |
| HGC170N12L
| SOT23 | 175mΩ | 200mΩ | 120V | 3A | / | 1.3V | SGT工艺NMOS |
| HGK032N12L
| TO-252 | 32mΩ | 42mΩ | 120V | 22A | 1290pF | 1.7V | SGT工艺NMOS |
| HGE032N12L
| PDFN5*6 | 32mΩ | 42mΩ | 120 | 20A | / | 1.7V | SGT工艺NMOS |
HGK016N12L
| TO-252 | 16mΩ | 22mΩ | 120V | 45A | / | 1.7V | SGT工艺NMOS |
HGE016N12L
| PDFN5*6 | 16mΩ | 22mΩ | 120V | 40A | / | 1.7V | SGT工艺NMOS |
HGK012N12L
| TO-252 | 14mΩ | 15mΩ | 120V | 50A | 3200pF | 1.6V | SGT工艺NMOS |
HGE012N12L
|
PDFN5*6 | 14mΩ | 15mΩ | 120V | 50A | 1960pF | 1.6V | SGT工艺NMOS |
HGK023N12L
| TO-252 | 23mΩ | 30mΩ | 120V | 30A | 960pF | 1.7V | SGT工艺NMOS |
HGE023N12L
| PDFN5*6 | 23mΩ | 30mΩ | 120V | 30A | 960pF | 1.7V | SGT工艺NMOS |
HC1545W
| PDFN3*3 | 112mΩ | 119mΩ | 150V | 13A | 1600pF | 1.9V | 沟槽型NMOS |
HC120N15L
|
TO-252 | 122mΩ | 119mΩ | 150V | 15A | 1600pF | 1.9V | 沟槽型NMOS |
HG1541S
| SOT23 | 180mΩ | 200mΩ | 150V | 2A | / | 2.5V | SGT工艺NMOS |
HG200N15LS
| SOP-8 | 180mΩ | 200mΩ | 150V | 5A | / | 2.5V | SGT工艺NMOS |
HG200N15LT
| TO-252 | 180mΩ | 200mΩ | 150V | 5A | / | 2.5V | SGT工艺NMOS |
HC1519D
| PDFN3*3 | 242mΩ | 238mΩ | 150V | 6A | 855pF | 1.8V | 沟槽型NMOS |
HC240N15L
| TO-252 | 240mΩ | 245mΩ | 150V | 8A | 855pF | 1.7V | 沟槽型NMOS |
| HCK245N15L
| TO-252 | 230mΩ | 226mΩ | 150V | 8A | 785pF | 0.9V | 沟槽型NMOS |
| HCD245N15L
| PDFN3*3 | 230mΩ | 226mΩ | 150V | 8A | 785pF | 0.9V | 沟槽型NMOS |
| HCM245N15L
| SOT23-3L | 235mΩ | 231mΩ | 150V | 3A | 785pF | 0.9V | 沟槽型NMOS |
HC1535S
| SOT23 | 430mΩ | / | 150V | 1A | 372pF | 2.5V | 沟槽型NMOS |
HC1549S
| SOT23 | / | 700mΩ | 150V | 0.5A | / | 1.8V | 沟槽型NMOS |
HC080N15L
| TO-252 | 128mΩ | 129mΩ | 150V | 12A | 1600pF | 1.1V | 沟槽型NMOS |
HGK040N15L
| TO-252 | 40mΩ | 45mΩ | 150V | 30A | 986pF | 1.3V | SGT工艺NMOS |
| HGA040N15L
|
TO-220 | 40mΩ | 45mΩ | 150V | 40A | 986pF | 1.3V | SGT工艺NMOS |
| HGK028N15L
|
TO-252 | 28mΩ | 34mΩ | 150V | 45A | 690pF | 1.8V | SGT工艺NMOS |
| HGE028N15L
| PDFN5*6 | 28mΩ | 34mΩ | 150V | 45A | 690pF | 1.8V | SGT工艺NMOS |
| HGA028N15L
| TO-220 | 28mΩ | 34mΩ | 150V | 55A | 690pF | 1.8V | SGT工艺NMOS |
| HGK055N15L
| TO-252 | 52mΩ | 65mΩ | 150V | 20A | 620pF | 1.8V | SGT工艺NMOS |
| HGE055N15L
| PDFN5*6 | 52mΩ | 65mΩ | 150V | 20A | 620pF | 1.8V | SGT工艺NMOS |
HC450N20L
| TO-252 | 490mΩ | 500mΩ | 200V | 5A | 655pF | 1.7V | 沟槽型NMOS |
HC240N20L
| TO-252 | 240mΩ | 245mΩ | 200V | 8A | 1055pF | 1.5V | 沟槽型NMOS |
HCK1052N25L
| TO-252 | 980mΩ | / | 250V | 3.5A | 755pF | 1.8V | 沟槽型NMOS |
HCK450N25L
| TO-252 | 420mΩ | 410mΩ | 250V | 7A | 1455pF | 1.3V | 沟槽型NMOS |
备注：
1. 标注的Id电流是MOS芯片的最大常态电流，实际使用时的最大常态电流还要受封装的最大电流限制。因此客户设计产品时的最大使用电流设定要考虑封装的最大电流限制。建议客户设计产品时的最大使用电流设定更重要的是要考虑MOS的内阻参数。
2. 建议在MOS的栅源（G/S）极之间并一个电阻（10K）和一个稳压二极管(5V-12V)起到保护栅源（G/S）极过压的作用。
3.建议MOS管的开启电压尽量提高，这样MOS管才能充分开启导通，这个时候内阻最小，不容易发烫。一般建议低压MOS的VGS开启电压设定为4.5V以上，中高压MOS的开启电压设定为10V以上.
4.MOS 电路操作注意事项：
静电在很多地方都会产生，采取下面的预防措施，可以有效防止MOS 电路由于受静电放电影响而引起的损坏：
• 操作人员要通过防静电腕带接地。
• 设备外壳必须接地。
• 装配过程中使用的工具必须接地。
• 必须采用导体包装或抗静电材料包装或运输
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